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  • BC327G

BC327G

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Manufacturer No:

BC327G

Manufacturer:

ON Semiconductor

HK JDW NO:

598-BC327G

Package:

TO-226-3, TO-92-3 (TO-226AA)

Datasheet:

BC327G

ECAD Model:

Description:

BC327G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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BC327G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -700mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Its current rating is -800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The part has a transition frequency of 260MHz.A maximum collector current of 800mA volts is possible.

BC327G Features


the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -800mA
a transition frequency of 260MHz

BC327G Applications


There are a lot of ON Semiconductor BC327G applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver
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Package

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Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
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Step5Bar-code shipping tag

BC327G

technical specifications, attributes, parameters and parts with similar specifications to BC327G.

  • Type
    Parameter
    Select All
  • Time@Peak Reflow Temperature-Max (s)

    40

  • Base Part Number

    BC327

  • Pin Count

    3

  • Qualification Status

    Not Qualified

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    1.5W

  • Power - Max

    625mW

  • Transistor Application

    AMPLIFIER

  • Gain Bandwidth Product

    260MHz

  • Polarity/Channel Type

    PNP

  • Transistor Type

    PNP

  • Collector Emitter Voltage (VCEO)

    700mV

  • Max Collector Current

    800mA

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    100 @ 100mA 1V

  • Current - Collector Cutoff (Max)

    100nA

  • Vce Saturation (Max) @ Ib, Ic

    700mV @ 50mA, 500mA

  • Collector Emitter Breakdown Voltage

    45V

  • Transition Frequency

    260MHz

  • Collector Emitter Saturation Voltage

    -700mV

  • Collector Base Voltage (VCBO)

    -50V

  • Emitter Base Voltage (VEBO)

    5V

  • hFE Min

    100

  • RoHS Status

    RoHS Compliant

  • Lead Free

    Lead Free

  • Mounting Type

    Through Hole

  • Package / Case

    TO-226-3, TO-92-3 (TO-226AA)

  • Surface Mount

    NO

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Bulk

  • Published

    2009

  • JESD-609 Code

    e1

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    -45V

  • Max Power Dissipation

    625mW

  • Terminal Position

    BOTTOM

  • Peak Reflow Temperature (Cel)

    260

  • Current Rating

    -800mA

  • Frequency

    260MHz

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