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FZT953TA

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Manufacturer No:

FZT953TA

Manufacturer:

Diodes Incorporated

HK JDW NO:

233-FZT953TA

Package:

TO-261-4, TO-261AA

Datasheet:

FZT953TA

ECAD Model:

Description:

FZT953TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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FZT953TA Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 2A 1V.This design offers maximum flexibility with a collector emitter saturation voltage of -420mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 6V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -5A current rating.Parts of this part have transition frequencies of 125MHz.An input voltage of 100V volts is the breakdown voltage.The maximum collector current is 5A volts.

FZT953TA Features


the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of -420mV
the vce saturation(Max) is 460mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is -5A
a transition frequency of 125MHz

FZT953TA Applications


There are a lot of Diodes Incorporated FZT953TA applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FZT953TA

technical specifications, attributes, parameters and parts with similar specifications to FZT953TA.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    15 Weeks

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-261-4, TO-261AA

  • Number of Pins

    3

  • Weight

    7.994566mg

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Cut Tape (CT)

  • Published

    2006

  • JESD-609 Code

    e3

  • Pbfree Code

    no

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    4

  • Termination

    SMD/SMT

  • ECCN Code

    EAR99

  • Terminal Finish

    Matte Tin (Sn)

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    -100V

  • Max Power Dissipation

    3W

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Current Rating

    -5A

  • Frequency

    125MHz

  • Time@Peak Reflow Temperature-Max (s)

    40

  • Base Part Number

    FZT953

  • JESD-30 Code

    R-PDSO-G4

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    3W

  • Case Connection

    COLLECTOR

  • Transistor Application

    SWITCHING

  • Gain Bandwidth Product

    125MHz

  • Polarity/Channel Type

    PNP

  • Transistor Type

    PNP

  • Collector Emitter Voltage (VCEO)

    100V

  • Max Collector Current

    5A

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    100 @ 2A 1V

  • Current - Collector Cutoff (Max)

    50nA ICBO

  • Vce Saturation (Max) @ Ib, Ic

    460mV @ 500mA, 5A

  • Collector Emitter Breakdown Voltage

    100V

  • Transition Frequency

    125MHz

  • Collector Emitter Saturation Voltage

    -420mV

  • Max Breakdown Voltage

    100V

  • Frequency - Transition

    120MHz

  • Collector Base Voltage (VCBO)

    140V

  • Emitter Base Voltage (VEBO)

    6V

  • hFE Min

    100

  • Height

    1.65mm

  • Length

    6.7mm

  • Width

    3.7mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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