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  • STD2HNK60Z

STD2HNK60Z

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Manufacturer No:

STD2HNK60Z

Manufacturer:

STMicroelectronics

HK JDW NO:

761-STD2HNK60Z

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Datasheet:

STD2HNK60Z

ECAD Model:

Description:

STD2HNK60Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at HK JDW

Quantity:

In Stock : 999

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STD2HNK60Z MOSFET Description


To satisfy the increasing need for a high-voltage power switching design, the STD2HNK60Z power MOSFET is the proper and pertinent choice for broad applications. To start with, this MOSFET presents an amazing low on-resistance characteristic of 4.8 Ω (max.). And it's got a 2 A continuous current driving capability while its total power dissipation can be added up to 45 W under 25 ℃ operating temperature.



STD2HNK60Z MOSFET Features


  • Gate charge minimized

  • 100% avalanche tested

  • Extremely high dv/dt capability

  • Improved ESD ability

  • New high voltage benchmark



STD2HNK60Z MOSFET Applications


  • Switching Applications

  • Automotive

  • eMobility

  • Onboard charger

  • DC-DC

  • Motor control

  • Battery Protection

  • Load Management

  • Portable Devices

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UPS(www.ups.com)
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From $40.00 basic shipping fee depend on zone and country.
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

STD2HNK60Z

technical specifications, attributes, parameters and parts with similar specifications to STD2HNK60Z.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    12 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 7 months ago)

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-252-3, DPak (2 Leads + Tab), SC-63

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Series

    SuperMESH™

  • JESD-609 Code

    e3

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Resistance

    4.8Ohm

  • Terminal Finish

    Matte Tin (Sn) - annealed

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Time@Peak Reflow Temperature-Max (s)

    30

  • Base Part Number

    STD2HNK

  • Pin Count

    3

  • JESD-30 Code

    R-PSSO-G2

  • Number of Elements

    1

  • Power Dissipation-Max

    45W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    45W

  • Turn On Delay Time

    10 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    4.8 Ω @ 1A, 10V

  • Vgs(th) (Max) @ Id

    4.5V @ 50μA

  • Input Capacitance (Ciss) (Max) @ Vds

    280pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    2A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    15nC @ 10V

  • Rise Time

    30ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±30V

  • Fall Time (Typ)

    50 ns

  • Turn-Off Delay Time

    13 ns

  • Continuous Drain Current (ID)

    2A

  • JEDEC-95 Code

    TO-252AA

  • Gate to Source Voltage (Vgs)

    30V

  • Drain Current-Max (Abs) (ID)

    2A

  • Drain to Source Breakdown Voltage

    600V

  • Pulsed Drain Current-Max (IDM)

    8A

  • Radiation Hardening

    No

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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