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BCX38C

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Manufacturer No:

BCX38C

Manufacturer:

Diodes Incorporated

HK JDW NO:

233-BCX38C

Package:

TO-226-3, TO-92-3 (TO-226AA)

Datasheet:

BCX38C

ECAD Model:

Description:

BCX38C datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW

Quantity:

In Stock : 999

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BCX38C Overview


In this device, the DC current gain is 10000 @ 500mA 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 1.25V allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.25V @ 8mA, 800mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 800mA.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.The current rating of this fuse is 800mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.A maximum collector current of 800mA volts can be achieved.

BCX38C Features


the DC current gain for this device is 10000 @ 500mA 5V
a collector emitter saturation voltage of 1.25V
the vce saturation(Max) is 1.25V @ 8mA, 800mA
the emitter base voltage is kept at 10V
the current rating of this device is 800mA

BCX38C Applications


There are a lot of Diodes Incorporated BCX38C applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
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Step5Bar-code shipping tag

BCX38C

technical specifications, attributes, parameters and parts with similar specifications to BCX38C.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    15 Weeks

  • Contact Plating

    Tin

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-226-3, TO-92-3 (TO-226AA)

  • Number of Pins

    3

  • Weight

    453.59237mg

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~200°C TJ

  • Packaging

    Bulk

  • Published

    2012

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    60V

  • Max Power Dissipation

    1W

  • Terminal Position

    BOTTOM

  • Terminal Form

    WIRE

  • Peak Reflow Temperature (Cel)

    260

  • Current Rating

    800mA

  • Base Part Number

    BCX38

  • Pin Count

    3

  • Number of Elements

    1

  • Polarity

    NPN

  • Element Configuration

    Single

  • Power Dissipation

    1W

  • Transistor Type

    NPN - Darlington

  • Collector Emitter Voltage (VCEO)

    60V

  • Max Collector Current

    800mA

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    10000 @ 500mA 5V

  • Current - Collector Cutoff (Max)

    100nA ICBO

  • Vce Saturation (Max) @ Ib, Ic

    1.25V @ 8mA, 800mA

  • Collector Emitter Breakdown Voltage

    60V

  • Collector Emitter Saturation Voltage

    1.25V

  • Collector Base Voltage (VCBO)

    80V

  • Emitter Base Voltage (VEBO)

    10V

  • hFE Min

    5000

  • Continuous Collector Current

    800mA

  • Height

    4.83mm

  • Length

    4.78mm

  • Width

    3.66mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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