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MMBT4403T-7-F
MMBT4403T-7-F
233-MMBT4403T-7-F
SOT-523
MMBT4403T-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
In Stock : 999
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Product Details
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MMBT4403T-7-F Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -750mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Maintaining the continuous collector voltage at -600mA is essential for high efficiency.The base voltage of the emitter can be kept at -5V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-600mA).There is a transition frequency of 200MHz in the part.Input voltage breakdown is available at 40V volts.When collector current reaches its maximum, it can reach 600mA volts.
MMBT4403T-7-F Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
MMBT4403T-7-F Applications
There are a lot of Diodes Incorporated MMBT4403T-7-F applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
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