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MMSTA42-7-F
MMSTA42-7-F
233-MMSTA42-7-F
SC-70, SOT-323
MMSTA42-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
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MMSTA42-7-F Overview
This device has a DC current gain of 40 @ 30mA 10V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.Continuous collector voltages should be kept at 200mA to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.As you can see, the part has a transition frequency of 50MHz.Single BJT transistor can take a breakdown input voltage of 300V volts.During maximum operation, collector current can be as low as 200mA volts.
MMSTA42-7-F Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 50MHz
MMSTA42-7-F Applications
There are a lot of Diodes Incorporated MMSTA42-7-F applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
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