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T2N7002AK,LM(T

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Manufacturer No:

T2N7002AK,LM(T

HK JDW NO:

Package:

SOT-23-3

Datasheet:

T2N7002AK,LM(T

ECAD Model:

Description:

N-Channel 60 V 200mA (Ta) 320mW (Ta) Surface Mount SOT-23-3

Quantity:

In Stock : 6041

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Product Details

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Product Description: T2N7002AK,LM(T) N-Channel Enhancement Mode Field-Effect Transistor (FET)


The T2N7002AK,LM(T) is an N-channel enhancement mode field-effect transistor (FET) designed to provide efficient switching and amplification of electrical signals in various electronic circuits. With its advanced features and compact design, this FET offers engineers and designers a versatile solution for applications requiring reliable signal control.


Key Features:


Enhancement Mode: The T2N7002AK,LM(T) operates in the enhancement mode, meaning it requires a positive gate voltage to turn the transistor on, making it suitable for applications requiring precise control.


Low Threshold Voltage: The FET features a low threshold voltage, allowing it to activate and control signals with low input voltages effectively.


Compact SOT-23 Package: Packaged in a compact SOT-23 package, the FET is easy to integrate into small-scale electronic circuits with limited PCB space.


Low ON Resistance: The FET offers low ON resistance, minimizing voltage drop across the transistor and ensuring efficient signal transmission.


High Current Handling: Designed to handle moderate to high current levels, the FET can reliably switch and control current flow in various applications.


Applications:


The T2N7002AK,LM(T) N-channel enhancement mode FET finds application in a range of electronic systems where efficient signal control is crucial:


Switching Circuits: Integrate the FET into switching circuits to control the flow of current through various components, enabling efficient on-off switching operations.


Amplification: Use the FET in amplifier circuits to amplify weak electrical signals, enhancing signal strength and maintaining signal integrity.


Voltage Regulation: Implement the FET in voltage regulation circuits to stabilize and control voltage levels, ensuring consistent power supply to downstream components.


Signal Routing: Employ the FET in signal routing circuits to selectively route signals from one path to another based on control signals.


Keyboard Compatibility:


The T2N7002AK,LM(T) N-channel enhancement mode FET is not a standard keyboard component, as it is primarily used for signal control and amplification. However, it could be relevant in advanced keyboard designs with specific requirements:


Custom Controls: In specialized keyboards featuring customized interfaces or control mechanisms, the FET could be integrated to manage signal routing or control specific functions based on user interactions.


Signal Amplification: For keyboards with audio or sensor inputs, the FET could be utilized to amplify weak signals before processing or transmission.


In summary, the T2N7002AK,LM(T) N-channel enhancement mode FET offers efficient signal control and amplification capabilities. While not a typical keyboard component, its integration could add value to advanced keyboard designs requiring customized controls, signal management, or enhanced signal processing, contributing to improved functionality and performance.

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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

T2N7002AK,LM(T

technical specifications, attributes, parameters and parts with similar specifications to T2N7002AK,LM(T.

  • Type
    Parameter
    Select All
  • Type

    DESCRIPTION

  • Category

    Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

  • Mfr

    Toshiba Semiconductor and Storage

  • Series

    U-MOSVII-H

  • FET Type

    N-Channel

  • Technology

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss)

    60 V

  • Current - Continuous Drain (Id) @ 25°C

    200mA (Ta)

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs

    3.9Ohm @ 100mA, 10V

  • Vgs(th) (Max) @ Id

    2.1V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs

    0.35 nC @ 4.5 V

  • Vgs (Max)

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds

    17 pF @ 10 V

  • Power Dissipation-Max

    320mW (Ta)

  • Operating Temperature

    150°C (TJ)

  • Mounting Type

    Surface Mount

  • Supplier Device Package

    SOT-23-3

  • Package / Case

    TO-236-3, SC-59, SOT-23-3

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