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ZXT13P12DE6TA
ZXT13P12DE6TA
233-ZXT13P12DE6TA
SOT-23-6
ZXT13P12DE6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
In Stock : 999
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ZXT13P12DE6TA Overview
This device has a DC current gain of 300 @ 1A 2V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is -150mV, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 175mV @ 400mA, 4A.For high efficiency, the continuous collector voltage must be kept at -4A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7.5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -4A.The part has a transition frequency of 55MHz.Single BJT transistor can be broken down at a voltage of 12V volts.The maximum collector current is 4A volts.
ZXT13P12DE6TA Features
the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 175mV @ 400mA, 4A
the emitter base voltage is kept at 7.5V
the current rating of this device is -4A
a transition frequency of 55MHz
ZXT13P12DE6TA Applications
There are a lot of Diodes Incorporated ZXT13P12DE6TA applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
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ZXT13P12DE6TA
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